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| mbc13900 ordering information device marking package mbc13900t1 900 sot-343 package information plastic package case 318m (sot-343) (scale 2:1) definitive data: motorola reserves the right to change the produc tion detail specifications as may be required to permit improvements in the design of its produc t. ? motorola, inc., 2002. all rights reserved. the mbc13900 is a high performance transistor fabricated using motorola?s 15 ghz f bipolar ic process. it is housed in the 4-lead sc-70 (sot-343) surface mount plastic package resulting in a parasitic effect reduction and rf performance enhancements. the high performance at low power makes the mbc13900 suitable for front-end applications in portable wireless systems such as pagers, cellular and cordless phones. low noise figure, nf min = 0.8 db (typ) @ 0.9 ghz, 2.0 v and 5.0 ma maximum stable gain, 22 db @ 0.9 ghz, 2.0 v and 5.0 ma output third order intercept, oip3 = 18 dbm (typ) @ 2.0 v and 5.0 ma ultra small sot-343 surface mount package available only in tape and reel packaging figure 1. pin connections 4 1 3 2 base emitter collector emitter technical data mbc13900/d rev. 0, 06/2002 npn silicon low noise transistor f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
2 mbc13900 technical data motorola electrical specifications 1 electrical specifications table 1. maximum ratings rating symbol value unit collector-emitter voltage v ceo 6.5 vdc collector-base voltage v cbo 8.0 vdc emitter-base voltage v ebo 3.0 vdc power dissipation @ t c = 75 c derate linearity above t c = 75 c at p d(max) 0.188 2.5 w mw/ c collector current-continuous i c 20 ma maximum junction temperature t j(max) 150 c storage temperature t stg -55 to 150 c notes: 1. maximum ratings are those values beyond which damage to the device may occur. functional operation should be restricted to the limits in the electrical characteristics or recommended operating conditions tables. 2. esd (electrostatic discharge) immunity meets human body model (hbm) 400 v and machine model (mm) 50 v. additional esd data available upon request. table 2. thermal characteristic characteristic symbol max unit thermal resistance, junction-to-case r jc 400 c/w notes: to calculate the junction termpature use t j = (p d x r jc ) + t c . the case temperature measured on collector lead adjacent to the package body. table 3. electrical characteristics characteristic symbol min typ max unit off characteristic [note 1] collector-emitter breakdown voltage (i c = 0.1 ma, i b = 0) v (br)ceo 6.5 7.5 - vdc collector-base breakdown voltage (i c = 0.1 ma, i e = 0) v (br)cbo 8.0 12 - vdc emitter-base breakdown voltage (i e = 0.1 ma, i c = 0) v (br)ebo 3.0 4.0 - vdc collector cutoff current (v cb = 7.0 v, i e = 0) i cbo --0.1 a emitter cutoff current (v eb = 2.0 v, i c = 0) i ebo --0.1 a base cutoff current (v ce = 5.0 v, i b = 0) i ceo --0.1 a on characteristic [note 1] dc current gain (v ce = 2.0 v, i c = 5.0 ma) h fe 100 - 200 - f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . electrical specifications motorola mbc13900 technical data 3 dynamic characteristics current gain bandwidth product (v ce = 2.0 v, i c = 15 ma, f = 0.9 ghz) f -15-ghz performance characteristic insertion gain v ce = 2.0 v, i c = 5.0 ma, f = 0.9 ghz v ce = 2.0 v, i c = 5.0 ma, f = 1.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 0.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 1.9 ghz |s 21 | 2 18.5 13.5 16.5 12.5 19.5 14.5 17.5 13.5 - - - - db maximum stable gain and/or maximum available gain [note 2] v ce = 2.0 v, i c = 5.0 ma, f = 0.9 ghz v ce = 2.0 v, i c = 5.0 ma, f = 1.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 0.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 1.9 ghz msg, mag 22 18 21 17.5 23 19 22 18.5 - - - - db minimum noise figure v ce = 2.0 v, i c = 5.0 ma, f = 0.9 ghz v ce = 2.0 v, i c = 5.0 ma, f = 1.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 0.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 1.9 ghz nf min - - - - 0.8 0.9 0.8 0.9 0.9 1.1 0.9 1.1 db associated gain at minimum noise figure v ce = 2.0 v, i c = 5.0 ma, f = 0.9 ghz v ce = 2.0 v, i c = 5.0 ma, f = 1.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 0.9 ghz v ce = 3.0 v, i c = 3.0 ma, f = 1.9 ghz g nf - - - - 22 16 21 15 - - - - db output third order intercept [note 3] (v ce = 2.0 v, i c = 5.0 ma, f = 0.9 ghz) (v ce = 2.0 v, i c = 5.0 ma, f = 1.9 ghz) (v ce = 3.0 v, i c = 3.0 ma, f = 0.9 ghz) (v ce = 3.0 v, i c = 3.0 ma, f = 1.9 ghz) oip3 - - - - 18 21 13.5 19 - - - - dbm notes: 1. pulse width 300 s, duty cycle 2% pulsed. 2. maximum available gain and maximum stable gain are defined by the k factor as follows: , if k > 1, , if k < 1 3. z in and z out matched for optimum ip3. table 3. electrical characteristics (continued) characteristic symbol min typ max unit mag s 21 s 12 ---------- k k 2 1 ? ?? ?? = msg s 21 s 12 ---------- = f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 4 mbc13900 technical data motorola typical performance characteristics 2 typical performance characteristics figure 2. capacitance versus voltage figure 3. h fe , dc current gain versu s collector current figure 4. gain-bandwidth product versus collector current v cb , reverse voltage (v) 4.0 3.5 2.5 1.5 1.0 0 0.35 0.2 0.15 0 0.05 0.3 c, capacitance (pf) c ob c cb f = 1.0 mhz 0.5 2.0 3.0 0.1 0.25 162 2.0 v 3.0 v 160 158 156 154 152 150 148 h fe , dc current gain i c , collector current (ma) 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 20 2.0 16 0 2.0 v i c , collector current (ma) 3.0 v 14 12 10 8.0 6.0 4.0 2.0 4.0 6.0 8.0 10 12 14 16 18 f = 900 mhz f , gain bandwidth product (ghz) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . typical performance characteristics motorola mbc13900 technical data 5 figure 5. gain-bandwidth product versus collector current figure 6. maximum stable/available gain and forward insertion gain versus frequency figure 7. maximum stable/available gain and forward insertion gain versus frequency 2.0 16 0 3.0 v f = 1.9 ghz i c , collector current (ma) 2.0 v 14 12 10 8.0 6.0 4.0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 f , gain bandwidth product (ghz) 5.5 5.0 35 0 |s 21 | 2 msg v ce = 2.0 v i c = 5.0 ma f, frequency (ghz) mag 30 25 20 15 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 m s g , m a x i m u m s t a b l e g a i n ; m a g , m a x i m u m a v a i l a b l e g a i n ; | s 2 1 | 2 , f o r w a r d i n s e r t i o n g a i n ( d b ) 5.0 35 0 f, frequency (ghz) 30 25 20 15 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 m s g , m a x i m u m s t a b l e g a i n ; m a g , m a x i m u m a v a i l a b l e g a i n ; | s 2 1 | 2 , f o r w a r d i n s e r t i o n g a i n ( d b ) v ce = 3.0 v i c = 3.0 ma mag |s 21 | 2 msg f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 6 mbc13900 technical data motorola typical performance characteristics figure 8. maximum stable/available gain and forward insertion gain versus collector current figure 9. maximum stable/available gain and forward insertion gain versus collector current figure 10. minimum noise figure and associated gain versus frequency i c , collector current (ma) |s 21 | 2 1.9 ghz v ce = 2.0 v msg/mag 1.9 ghz |s 21 | 2 900 mhz msg/mag 900 mhz m s g , m a x i m u m s t a b l e g a i n ; m a g , m a x i m u m a v a i l a b l e g a i n ; | s 2 1 | 2 , f o r w a r d i n s e r t i o n g a i n ( d b ) 20 02.04.06.08.01012141618 6.0 26 24 22 20 18 16 14 12 10 8.0 7.0 27 25 23 21 19 17 15 13 11 9.0 i c , collector current (ma) m s g , m a x i m u m s t a b l e g a i n ; m a g , m a x i m u m a v a i l a b l e g a i n ; | s 2 1 | 2 , f o r w a r d i n s e r t i o n g a i n ( d b ) v ce = 3.0 v |s 21 | 2 1.9 ghz msg/mag 1.9 ghz |s 21 | 2 900 mhz msg/mag 900 mhz 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 0.6 1.8 1.6 1.4 1.2 1.0 0.8 g n f , a s s o c i a t e d g a i n ( d b ) 2.0 26 nf min g nf v ce = 2.0 v ic = 5.0 ma f, frequency (ghz) 22 18 14 10 6.0 n f m i n , m i n i m u m n o i s e f i g u r e ( d b ) 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . typical performance characteristics motorola mbc13900 technical data 7 figure 11. minimum noise figure and associated gain versus frequency figure 12. minimum noise figure and associated gain versus collector current figure 13. minimum noise figure and associated gain versus collector current 2.0 28 26 22 18 14 10 6.0 24 20 16 12 8.0 4.0 4.0 0.5 0.6 1.8 f, frequency (ghz) 1.6 1.4 1.2 1.0 0.8 1.0 1.5 2.0 2.5 3.0 3.5 nf min g nf v ce = 3.0 v ic = 3.0 ma g n f , a s s o c i a t e d g a i n ( d b ) n f m i n , m i n i m u m n o i s e f i g u r e ( d b ) 0.6 1.8 1.6 1.4 1.2 1.0 0.8 0 24 20 16 12 8.0 4.0 g nf 900 mhz v ce = 2.0 v i c , collector current (ma) g nf 1.9 ghz nf min 900 mhz nf min 1.9 ghz g n f , a s s o c i a t e d g a i n ( d b ) n f m i n , m i n i m u m n o i s e f i g u r e ( d b ) 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 2.0 26 0.6 1.8 i c , collector current (ma) 22 1.6 18 1.4 14 1.2 10 1.0 6.0 0.8 g n f , a s s o c i a t e d g a i n ( d b ) n f m i n , m i n i m u m n o i s e f i g u r e ( d b ) v ce = 3.0 v g nf 900 mhz g nf 1.9 ghz nf min 900 mhz nf min 1.9 ghz 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 8 mbc13900 technical data motorola typical performance characteristics figure 14. output third order intercept versus collector current figure 15. output third order intercept versus collector current figure 16. one db compression point versus collector current 0 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 2.0 v f = 900 mhz i c , collector current (ma) o i p 3 , o u t p u t i n t e r c e p t p o i n t ( d b m ) 3.0 v 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 4.0 26 24 22 20 18 16 14 12 10 8.0 6.0 o i p 3 , o u t p u t i n t e r c e p t p o i n t ( d b m ) i c , collector current (ma) 2.0 v f = 1.9 ghz 3.0 v 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 -14 14 10 6.0 2.0 -2.0 -6.0 -10 i c , collector current (ma) p 1 d b , 1 d b c o m p r e s s i o n p o i n t ( d b m ) 2.0 v f = 900 mhz 3.0 v 0 20 2.0 4.0 6.0 8.0 10 12 14 16 18 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . typical performance characteristics motorola mbc13900 technical data 9 figure 17. one db compression point versus collector current -14 i c , collector current (ma) p 1 d b , 1 d b c o m p r e s s i o n p o i n t ( d b m ) 14 10 6.0 2.0 -2.0 -6.0 -10 2.0 v f = 1.9 ghz 3.0 v 0 20 2.0 4.0 6.0 8.0 10 12 14 16 18 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 10 mbc13900 technical data motorola applications information 3 applications information a flexible applications board topology has been developed to demonstrate the performance of the mbc13900 at 900 and 1900 mhz. the designs are a compromise of the competing performance requirements of gain, noise figure, input third-order intercept point (iip3) and return losses. pcb, samples and assembly information are available from motorola under part number kitmbc13900/d. 3.1 900 mhz lna figure 18 shows the schematic and figure 19 shows the component placement for a 900 mhz lna. the design goals for the circuit are: nf < 1.2 db gain > 19 db return loss > 10 db, input and output unconditional stability from 100 mhz to 6 ghz. typical performance that can be expected from this circuit at 3.0 and 3.5 v v cc is listed in table 4. the component values can be changed to enhance the performance of a particular parameter but usually at the expense of another. gain can be improved by sacrificing stability (r3 and r5). input return loss can be sacrificed to improve noise figure. iip3 can be improved by increasing emitter degeneration (l3) and bias current (r2). unused traces are available on the pcb to add emitter degeneration at leads 1 and 3 of the device. figure 18. 900 mhz lna schematic c3 l1 r4 r3 c2 c4 v cc c1 r1 r2 rf in rf out r5 l2 l4 c 7 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . applications information motorola mbc13900 technical data 11 figure 19. 900 mhz lna board layout 3.2 1900 mhz lna figure figure 20 shows the schematic and figure 21 shows the component placement for a 1900 mhz lna. the design goals for the circuit are: nf < 1.35 db gain > 14 db return loss > 10 db, input and output unconditional stability from 100 mhz to 6 ghz. typical performance that can be expected from this circuit at 3.0 v v cc and 5.0 ma is listed in table 5. the component values can be changed to enhance the performance of a particular parameter but usually at the expense of another. gain can be improved by sacrificing stability (r3 and r5). input return loss can be sacrificed to improve noise figure. input return loss can be improved at the expense of noise figure (c3, c7, l4). iip3 can be improved by increasing emitter degeneration (l3) and bias current (r2). unused traces are available on the pcb to add emitter degeneration at leads 1 and 3 of the device. table 4. typical 900 mhz lna performance v cc i c (ma) nf (db) 50 ? insertion gain (db) output ip3 (dbm) input return loss (db) output return loss (db) 3.0 5.0 1.2 19.7 15 10.1 10.2 3.5 6.1 1.21 20.2 17.6 10.8 10.8 gnd v cc c1 r 1 c4 r 5 l 2 c2 r3 c5 r2 r 4 l 1 c 6 c3 r6 component value comments c1 1.0 f optional bypassing c2 3.3 pf dc block and s 22 c3 12 pf dc block and s 11 c4 0.01 f broadband bypass c5 1.0 f broadband bypass c6 0.3 pf iip3 improvement l1 6.8 nh toko ll1608-fs, match, bias l2 5.6 nh toko ll1608-fh, match, bias l3 <0.5 nh emitter l on board (distance to gnd vias) r1 133 ? bias r2 49.9 k ? bias r3 16.5 ? stability, s 22 r4 0 ? jumper r5 3.9 ? stability, s 22 r6 0 ? jumper vias d = 15 mil pcb fr4 r =4.5, h=25 mil, t=1.75 mil f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 12 mbc13900 technical data motorola applications information figure 20. 1900 mhz lna schematic figure 21. 1900 mhz lna board layout table 5. typical 1900 mhz lna performance v cc i c (ma) nf (db) 50 ? insertion gain (db) output ip3 (dbm) input return loss (db) output return loss (db) 3.0 5.0 1.28 14 19 10.4 10.7 3.5 6.1 1.29 14.4 20.2 10.8 11 c3 l1 r4 r3 c2 c4 v cc c1 r1 r2 rf in rf out r5 l2 l4 c7 gnd v cc c1 r 1 c4 r 5 l 2 c2 r3 c5 r2 r 4 l 1 c 6 c3 r6 component value comments c1 1.0 f optional bypassing c2 22 pf dc block and output match c3 22 pf dc block and input match c4 0.01 f rf and im subharmonic short to ground c5 1.0 f rf and im subharmonic short to ground c7 0.6 pf input match, rf / s 11 compromise l1 8.2 nh bias decoupling, input match l2 3.3 nh output match, bias decoupling l3 <0.5 nh emitter l on board (distance to gnd vias) l4 1.2 nh s 11 r1 133 ? bias r2 49.9 k ? bias r3 8.2 ? stability and s 22 improvement r4 0 ? jumper r5 4.7 ? stability, gain, s 22 vias d = 15 mil pcb fr4 r =4.5, h=25 mil, t=1.75 mil f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . applications information motorola mbc13900 technical data 13 table 6. common emitter s-parameters v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | 2.0 1.0 0.1 0.973 -6 3.754 175 0.008 86 0.997 -3 0.5 0.961 -33 3.366 153 0.038 71 0.968 -12 0.9 0.895 -57 3.341 135 0.065 56 0.910 -22 1.0 0.868 -63 3.256 131 0.070 53 0.915 -24 1.5 0.766 -91 2.688 111 0.091 38 0.851 -33 1.9 0.721 -114 2.610 94 0.100 26 0.788 -39 2.0 0.706 -119 2.501 91 0.102 23 0.780 -41 2.4 0.649 -140 2.280 77 0.104 15 0.731 -47 3.0 0.628 -166 1.984 58 0.105 2 0.667 -56 3.5 0.606 173 1.717 45 0.099 -3 0.650 -62 4.0 0.606 155 1.478 33 0.094 -10 0.640 -68 4.5 0.611 138 1.421 21 0.089 -12 0.604 -74 5.0 0.610 122 1.309 9 0.085 -11 0.581 -81 2.0 0.1 0.948 -8 7.181 173 0.008 86 0.993 -4 0.5 0.907 -41 6.508 146 0.037 67 0.937 -15 0.9 0.796 -70 5.770 126 0.059 52 0.843 -27 1.0 0.763 -77 5.533 121 0.062 49 0.842 -29 1.5 0.638 -107 4.304 101 0.076 36 0.753 -37 1.9 0.585 -131 3.904 86 0.082 27 0.675 -42 2.0 0.571 -136 3.716 83 0.083 25 0.667 -44 2.4 0.532 -156 3.272 70 0.085 20 0.616 -48 3.0 0.520 179 2.745 53 0.087 13 0.554 -57 3.5 0.511 159 2.360 41 0.088 10 0.542 -62 4.0 0.518 143 2.046 30 0.088 7 0.530 -67 4.5 0.529 128 1.907 19 0.091 5 0.500 -72 5.0 0.536 114 1.747 8 0.096 5 0.474 -78 3.0 0.1 0.926 -10 10.121 172 0.008 84 0.990 -4 0.5 0.853 -48 8.944 141 0.035 65 0.906 -18 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 14 mbc13900 technical data motorola applications information 0.9 0.716 -80 7.393 120 0.053 49 0.786 -30 1.0 0.680 -87 7.000 115 0.056 47 0.780 -31 1.5 0.556 -118 5.248 95 0.068 36 0.685 -38 1.9 0.507 -141 4.579 81 0.073 31 0.609 -43 2.0 0.497 -147 4.359 78 0.074 29 0.601 -44 2.4 0.472 -166 3.778 66 0.077 25 0.554 -48 3.0 0.468 170 3.120 51 0.082 21 0.495 -56 3.5 0.466 152 2.680 39 0.086 18 0.485 -61 4.0 0.476 137 2.333 28 0.091 15 0.476 -66 4.5 0.491 123 2.148 18 0.096 12 0.447 -70 5.0 0.503 109 1.963 8 0.104 11 0.423 -75 5.0 0.1 0.884 -13 15.377 170 0.007 83 0.982 -6 0.5 0.753 -59 12.586 134 0.032 61 0.846 -22 0.9 0.595 -94 9.434 111 0.046 49 0.699 -33 1.0 0.561 -102 8.786 106 0.048 47 0.689 -34 1.5 0.457 -134 6.309 88 0.058 39 0.596 -39 1.9 0.421 -156 5.291 75 0.064 36 0.531 -42 2.0 0.416 -161 5.033 72 0.065 36 0.525 -43 2.4 0.408 -178 4.295 62 0.072 34 0.485 -47 3.0 0.418 160 3.505 48 0.080 30 0.435 -54 3.5 0.424 143 3.012 37 0.088 26 0.426 -58 4.0 0.437 129 2.633 27 0.095 23 0.415 -63 4.5 0.454 116 2.394 17 0.104 19 0.393 -67 5.0 0.471 104 2.181 7 0.114 15 0.368 -72 10 0.1 0.785 -19 25.691 165 0.007 78 0.961 -8 0.5 0.575 -79 17.485 122 0.027 59 0.750 -28 0.9 0.438 -118 11.534 99 0.037 51 0.595 -35 1.0 0.421 -126 10.545 95 0.038 51 0.567 -35 table 6. common emitter s-parameters (continued) v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . applications information motorola mbc13900 technical data 15 1.5 0.366 -156 7.311 80 0.050 48 0.500 -38 1.9 0.356 -176 5.901 69 0.058 46 0.454 -39 2.0 0.354 -180 5.625 67 0.060 46 0.449 -40 2.4 0.362 166 4.737 57 0.069 44 0.417 -43 3.0 0.392 148 3.842 45 0.082 38 0.372 -49 3.5 0.399 134 3.307 35 0.092 34 0.357 -54 4.0 0.414 120 2.907 25 0.103 29 0.345 -59 4.5 0.434 109 2.613 16 0.113 25 0.328 -65 5.0 0.453 98 2.374 6 0.124 18 0.307 -69 15 0.1 0.708 -25 32.559 161 0.007 83 0.938 -10 0.5 0.480 -94 19.200 115 0.024 58 0.679 -29 0.9 0.381 -133 11.991 94 0.033 54 0.538 -34 1.0 0.371 -141 10.889 90 0.035 54 0.515 -33 1.5 0.344 -169 7.466 76 0.047 53 0.460 -36 1.9 0.345 174 5.959 66 0.056 51 0.424 -37 2.0 0.345 170 5.683 64 0.059 50 0.420 -38 2.4 0.358 157 4.765 55 0.069 47 0.392 -41 3.0 0.392 142 3.852 43 0.084 42 0.349 -47 3.5 0.403 129 3.324 33 0.095 37 0.336 -52 4.0 0.418 116 2.924 24 0.105 31 0.323 -57 4.5 0.438 106 2.618 14 0.117 26 0.307 -63 5.0 0.460 95 2.375 5 0.128 20 0.288 -67 20 0.1 0.639 -31 37.220 158 0.007 75 0.919 -12 0.5 0.430 -107 19.608 110 0.022 58 0.629 -30 0.9 0.365 -146 11.885 91 0.032 58 0.504 -32 1.0 0.360 -153 10.741 87 0.034 58 0.483 -32 1.5 0.350 -178 7.337 73 0.047 55 0.438 -34 1.9 0.357 167 5.815 64 0.056 54 0.408 -35 table 6. common emitter s-parameters (continued) v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 16 mbc13900 technical data motorola applications information 2.0 0.357 164 5.555 62 0.060 52 0.403 -36 2.4 0.371 152 4.641 53 0.069 49 0.378 -39 3.0 0.408 138 3.746 42 0.084 44 0.338 -45 3.5 0.419 126 3.239 32 0.096 39 0.323 -51 4.0 0.435 113 2.849 23 0.109 32 0.312 -56 4.5 0.453 104 2.545 13 0.119 27 0.295 -61 5.0 0.475 94 2.306 4 0.131 20 0.276 -66 3.0 1.0 0.1 0.970 -7 3.745 175 0.007 86 0.999 -3 0.5 0.949 -31 3.341 154 0.034 73 0.989 -12 0.9 0.892 -55 3.339 136 0.059 59 0.939 -21 1.0 0.878 -61 3.275 132 0.065 54 0.919 -23 1.5 0.778 -89 2.724 112 0.084 39 0.869 -31 1.9 0.730 -111 2.648 96 0.093 28 0.808 -37 2.0 0.714 -116 2.543 93 0.095 26 0.801 -39 2.4 0.652 -137 2.326 80 0.098 17 0.755 -44 3.0 0.634 -164 2.040 61 0.098 5 0.689 -53 3.5 0.604 175 1.765 48 0.093 -1 0.670 -60 4.0 0.599 157 1.521 35 0.091 -8 0.660 -66 4.5 0.604 140 1.466 23 0.084 -10 0.626 -73 5.0 0.602 124 1.348 12 0.080 -9 0.606 -79 2.0 0.1 0.951 -8 6.981 173 0.007 88 0.992 -3 0.5 0.913 -39 6.335 147 0.033 69 0.944 -14 0.9 0.807 -67 5.710 128 0.054 54 0.859 -25 1.0 0.774 -74 5.488 123 0.057 51 0.860 -27 1.5 0.647 -104 4.306 103 0.071 37 0.777 -35 1.9 0.591 -127 3.935 87 0.077 28 0.704 -40 2.0 0.576 -132 3.750 85 0.077 26 0.697 -42 2.4 0.531 -152 3.316 72 0.080 22 0.647 -47 table 6. common emitter s-parameters (continued) v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . applications information motorola mbc13900 technical data 17 3.0 0.516 -178 2.790 55 0.082 14 0.584 -55 3.5 0.505 162 2.402 43 0.081 12 0.574 -60 4.0 0.508 146 2.078 32 0.083 8 0.563 -65 4.5 0.521 130 1.943 21 0.084 7 0.535 -70 5.0 0.526 115 1.782 10 0.089 7 0.511 -76 3.0 0.1 0.928 -9 10.077 172 0.007 84 0.991 -4 0.5 0.859 -46 8.948 142 0.032 66 0.917 -17 0.9 0.725 -77 7.487 121 0.049 51 0.806 -28 1.0 0.687 -84 7.105 116 0.052 50 0.803 -30 1.5 0.559 -115 5.356 97 0.063 38 0.711 -37 1.9 0.505 -138 4.701 82 0.067 31 0.638 -41 2.0 0.493 -143 4.473 79 0.068 31 0.631 -42 2.4 0.462 -162 3.886 68 0.072 27 0.585 -47 3.0 0.458 173 3.218 52 0.077 22 0.529 -54 3.5 0.452 154 2.763 41 0.082 20 0.518 -59 4.0 0.460 139 2.403 30 0.085 17 0.509 -64 4.5 0.476 125 2.216 20 0.090 14 0.483 -69 5.0 0.486 110 2.025 10 0.098 13 0.460 -74 5.0 0.1 0.884 -12 15.441 170 0.007 82 0.985 -5 0.5 0.756 -55 12.831 135 0.029 64 0.882 -22 0.9 0.598 -90 9.722 112 0.042 50 0.743 -31 1.0 0.570 -98 9.076 107 0.045 48 0.711 -32 1.5 0.458 -129 6.576 89 0.054 42 0.629 -38 1.9 0.415 -152 5.514 76 0.060 38 0.564 -40 2.0 0.408 -157 5.251 74 0.061 37 0.557 -41 2.4 0.395 -174 4.489 63 0.067 35 0.517 -45 3.0 0.407 163 3.680 49 0.076 31 0.464 -51 3.5 0.407 146 3.158 39 0.083 28 0.450 -56 table 6. common emitter s-parameters (continued) v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 18 mbc13900 technical data motorola applications information 4.0 0.417 131 2.768 29 0.090 25 0.438 -61 4.5 0.434 118 2.517 19 0.098 21 0.419 -67 5.0 0.450 105 2.294 9 0.108 17 0.398 -72 10 0.1 0.795 -18 25.574 165 0.007 79 0.970 -7 0.5 0.587 -74 17.871 123 0.025 60 0.780 -26 0.9 0.438 -112 11.957 101 0.034 54 0.631 -33 1.0 0.417 -119 10.950 97 0.036 52 0.602 -33 1.5 0.351 -150 7.620 81 0.047 50 0.536 -37 1.9 0.334 -171 6.171 70 0.054 47 0.490 -38 2.0 0.332 -175 5.878 68 0.056 47 0.485 -39 2.4 0.336 169 4.960 59 0.065 45 0.454 -42 3.0 0.363 151 4.029 46 0.076 40 0.408 -48 3.5 0.371 136 3.465 36 0.087 36 0.393 -53 4.0 0.385 122 3.048 27 0.097 31 0.383 -58 4.5 0.405 110 2.743 17 0.107 26 0.368 -63 5.0 0.425 99 2.493 8 0.117 20 0.348 -68 15 0.1 0.723 -22 32.706 163 0.006 79 0.949 -9 0.5 0.487 -88 19.861 116 0.021 60 0.695 -26 0.9 0.373 -127 12.612 96 0.031 55 0.556 -32 1.0 0.355 -134 11.492 92 0.033 55 0.555 -32 1.5 0.317 -164 7.867 77 0.044 53 0.494 -34 1.9 0.312 177 6.309 67 0.053 52 0.460 -37 2.0 0.315 173 6.004 65 0.055 51 0.454 -37 2.4 0.327 159 5.044 56 0.064 48 0.429 -41 3.0 0.354 142 4.069 44 0.078 43 0.390 -47 3.5 0.371 128 3.507 35 0.089 38 0.384 -52 4.0 0.383 116 3.073 25 0.099 33 0.376 -57 4.5 0.400 105 2.757 16 0.109 27 0.361 -61 table 6. common emitter s-parameters (continued) v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . applications information motorola mbc13900 technical data 19 5.0 0.427 95 2.500 7 0.120 21 0.341 -65 20 0.1 0.660 -27 37.408 160 0.006 79 0.933 -10 0.5 0.430 -98 20.678 112 0.021 60 0.672 -27 0.9 0.343 -137 12.691 93 0.030 59 0.548 -31 1.0 0.335 -144 11.493 89 0.032 59 0.526 -31 1.5 0.313 -172 7.854 75 0.044 57 0.479 -33 1.9 0.317 171 6.249 66 0.052 55 0.450 -34 2.0 0.318 168 5.963 64 0.055 54 0.446 -35 2.4 0.332 155 4.996 55 0.065 51 0.421 -38 3.0 0.365 140 4.042 43 0.080 45 0.381 -44 3.5 0.379 127 3.486 34 0.090 40 0.366 -50 4.0 0.393 115 3.068 25 0.102 34 0.356 -55 4.5 0.411 105 2.747 16 0.112 29 0.342 -61 5.0 0.434 94 2.492 6 0.123 23 0.324 -66 table 6. common emitter s-parameters (continued) v ce (vdc) i c (ma) f (mhz) s 11 s 21 s 12 s 22 |s 11 | |s 21 | |s 12 | |s 22 | f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 20 mbc13900 technical data motorola applications information table 7. common emitter noise parameters v ce (v) i c (ma) freq (ghz) nfmin (db) gamma opt rn ? rn ? g nf (db) k mag ang 2.0 5.0 0.5 0.76 0.26 3 9.0 0.18 25.27 0.29 0.7 0.76 0.25 14 8.5 0.17 23.60 0.37 0.9 0.77 0.24 25 8.5 0.17 22.03 0.48 1.0 0.77 0.24 31 8.0 0.16 21.29 0.51 1.5 0.82 0.23 60 7.0 0.14 17.94 0.74 1.9 0.90 0.22 85 6.5 0.13 15.73 0.90 2.0 0.92 0.22 91 6.5 0.13 15.24 0.93 2.4 1.03 0.22 116 5.5 0.11 13.54 1.03 3.0 1.24 0.23 155 5.0 0.10 11.75 1.17 3.5 1.47 0.25 -172 5.0 0.10 10.96 1.23 4.0 1.74 0.27 137 6.5 0.13 10.81 1.29 3.0 3.0 0.5 0.76 0.38 8 12.0 0.24 24.32 0.22 0.7 0.76 0.37 17 11.5 0.23 22.70 0.28 0.9 0.76 0.37 26 11.0 0.22 21.19 0.36 1.0 0.77 0.36 31 11.0 0.22 20.47 0.38 1.5 0.82 0.35 56 9.5 0.19 17.24 0.59 1.9 0.91 0.34 77 8.5 0.17 15.10 0.76 2.0 0.94 0.34 83 8.0 0.16 14.63 0.79 2.4 1.06 0.33 105 6.5 0.13 12.98 0.94 3.0 1.32 0.31 141 5.0 0.10 11.27 1.12 3.5 1.59 0.30 173 4.5 0.09 10.52 1.24 4.0 1.92 0.29 -153 6.5 0.13 10.39 1.34 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . applications information motorola mbc13900 technical data 21 figure 22. simplified package model table 8. spice parameters (mbc13900 die parameters) namevaluenamevaluenamevalue is 2.77e-16 irb 0.006 tf 6.34e-12 bf 181.6 rbm 0.047 xtf 3.051 nf 1.012 re 4.431 vtf 1.336 vaf 40.66 rc 5.845 itf 0.202 ikf 0.237 xtb 0.6 ptf 0 ise 3.79e-14 eg 1.195 tr 1.02e-09 ne 2.00 xti 0.8 fc 0.95 br 4.547 cje 4.52e-13 nr 1.00 vje 1.95 var 2.722 mje 0.58 ikr 9.98e-04 cjc 1.56e-13 isc 3.78e-15 vjc 0.424 nc 2.00 mjc 0.232 rb 9.055 xcjc 0.187 7.0 ff 0.5 nh 0.6 nh 140 ff 140 ff 0.1 nh 0.6 nh 0.5 nh b c e b c e 0.25 nh f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 22 mbc13900 technical data motorola applications information figure 23. constant gain and noise figure contours (f = 900 mhz) figure 24. constant gain and noise figure contours (f = 1.9 ghz) f (ghz) nf opt (db) rn k 0.9 0.77 8.5 0.48 o 0.24 25.2 v ce = 2.0 v i c = 5.0 ma --- potentially unstable 0.2 0.5 1.0 2.0 j1.0 j2.0 j0.5 j0.2 - j0.2 - j0.5 - j1.0 - j2.0 i n p u t o u t p u t 23 db 22 20 21 1.0 db 1.5 2.0 3.0 4.0 nf opt = 0.77 db f (ghz) nf opt (db) rn k 1.9 0.9 6.5 0.90 o 0.22 84.5 v ce = 2.0 v i c = 5.0 ma --- potentially unstable 0.2 0.5 1.0 2.0 j1.0 j2.0 j0.5 j0.2 - j0.2 - j0.5 - j1.0 - j2.0 17 16 i n p u t 18 19 db o u t p u t 3.0 4.0 2.0 db 1.0 db nf opt = 0.90 db 1.5 db f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . applications information motorola mbc13900 technical data 23 figure 25. constant gain and noise figure contours (f = 900 mhz) figure 26. constant gain and noise figure contours (f = 1.9 ghz) f (ghz) nf opt (db) rn k 0.9 0.76 11 0.36 o 0.37 26.3 v ce = 3.0 v i c = 3.0 ma --- potentially unstable 0.2 0.5 1.0 2.0 j1.0 j2.0 j0.5 j0.2 - j0.2 - j0.5 - j1.0 - j2.0 i n p u t o u t p u t 4.0 3.0 2.0 1.5 1.0 db 21 db 20 18 19 nf opt = 0.76 db f (ghz) nf opt (db) rn k 1.9 0.91 8.5 0.76 o 0.34 77.2 v ce = 3.0 v i c = 3.0 ma --- potentially unstable 0.2 0.5 1.0 2.0 j1.0 j2.0 j0.5 j0.2 - j0.2 - j0.5 - j1.0 - j2.0 i n p u t 3.0 4.0 1.0 db o u t p u t 18 db 17 15 16 1.5 2.0 nf opt = 0.91 db f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 24 mbc13900 technical data motorola packaging 4 packaging figure 27. outline dimensions for sot-343 (case 318m-01, issue 0) l2 q 4x 1 q 4x 1 q (l1) c seating plane gauge plane l view c a-b m 0.10 d c a 0.15 c 0.20 c e1/2 e/2 e1 3x b e d d 2x b pin 1 identifier in this zone 2x 1 3 4 2 e 2 e 1 e 4 b ( b 1 ) e 3 0 . 1 5 c 2 x 0.10 c a2 a1 a 4x s e a t i n g p l a n e b1 c 1 b c section b-b (see note 7) base metal with plating view c b b dim min max millimeters a --- 1.10 a1 0.00 0.10 a2 0.80 1.00 b 0.25 0.40 b1 0.25 0.35 b 0.55 0.70 b1 0.55 0.65 c 0.10 0.25 c1 0.08 0.20 d 2.00 bsc e 2.10 bsc e1 1.25 bsc e1 1.30 bsc e2 0.65 bsc e3 1.15 bsc e4 0.50 bsc l 0.26 0.46 l1 0.425 ref l2 0.15 bsc q 0 8 q 4 10 1 notes: 1. dimensions are in millimeters. 2. interpret dimensions and tolerances per asme y14.5m, 1994. 3. dimension d does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.15mm per end. dimension e1 does not include interlead flash or protrusion. interlead flash or protrusion shall not exceed 0.15mm per side. 4. dimensions d and e1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of plastic body. 5. datums a, b and d to be determined 0.10mm from the lead tip. 6. terminal numbers are shown for reference only. 7. these dimensions apply to the flat section of the lead between 0.08mm and 0.15mm from the lead tip. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . motorola mbc13900 technical data 25 notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . mbc13900/d how to reach us: usa/europe/locations not listed: motorola literature distribution; p.o. box 5405, denver, colorado 80217 1-303-675-2140 or 1-800-441-2447 japan: motorola japan ltd.; sps, technical information center, 3-20-1, minami-azabu minato-ku, tokyo 106-8573 japan 81-3-3440-3569 asia/pacific: motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industrial estate, tai po, n.t., hong kong 852-26668334 technical information center: 1-800-521-6274 home page: http://www.motorola.com/semiconductors information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical? parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals? must be validated for each customer application by customers technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola pr oducts for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the u.s. patent and trademark office. all other product or service names are the property of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. ? motorola, inc. 2002 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . |
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